ss8550 ? 2w output amplifier of portable radios in class b push-pull operation ? 2007 fairchild semiconductor corporation www.fairchildsemi.com ss8550 rev. 1.0.0 1 march 2008 ss8550 2w output amplifier of portable radi os in class b push-pull operation features ? complimentary to ss8050 ? collector current: i c =1.5a ? collector power dissipation: p c =1w (t c =25c) absolute maximum ratings t a =25c unless otherwise noted electrical characteristics t a =25c unless otherwise noted h fe classification symbol parameter ratings units v cbo collector-base voltage -40 v v ceo collector-emitter voltage -25 v v ebo emitter-base voltage -6 v i c collector current -1.5 a p c collector power dissipation 1 w t j junction temperature 150 c t stg storage temperature -65 ~ 150 c symbol parameter test condition min. typ. max. units bv cbo collector-base breakdown voltage i c = -100 a, i e =0 -40 v bv ceo collector-emitter breakdown voltage i c = -2ma, i b =0 -25 v bv ebo emitter-base breakdown voltage i e = -100 a, i c =0 -6 v i cbo collector cut- off current v cb = -35v, i e =0 -100 na i ebo emitter cut-off current v eb = -6v, i c =0 -100 na h fe1 h fe2 h fe3 dc current gain v ce = -1v, i c = -5ma v ce = -1v, i c = -100ma v ce = -1v, i c = -800ma 45 85 40 170 160 80 300 v ce (sat) collector-emitter saturation voltage i c = -800ma, i b = -80ma -0.28 -0.5 v v be (sat) base-emitter saturation voltage i c = -800ma, i b = -80ma -0.98 -1.2 v v be (on) base-emitter on voltage v ce = -1v, i c = -10ma -0.66 -1.0 v c ob output capacitance v cb = -10v, i e =0 f=1mhz 15 pf f t current gain bandwidth product v ce = -10v, i c = -50ma 100 200 mhz classification b c d h fe2 85 ~ 160 120 ~ 200 160 ~ 300 1. emitter 2. base 3. collector to-92 1
ss8550 ? features ? 2007 fairchild semiconductor corporation www.fairchildsemi.com ss8550 rev. 1.0.0 2 typical performance characteristics figure 1. static characteristic figure 2. dc current gain figure 3. base-emitter saturation voltage collector-emitter saturation voltage figure 4. base-emitter on voltage figure 5. collector output capacitance figure 6. current gain bandwidth product -0.4 -0.8 -1.2 -1.6 -2.0 -0.1 -0.2 -0.3 -0.4 -0.5 i b =-4.0ma i b =-3.5ma i b =-3.0ma i b =-2.5ma i b =-2.0ma i b =-1.5ma i b =-1.0ma i b =-0.5ma i c [ma], collector current v ce [v], collector-emitter voltage -0.1 -1 -10 -100 -1000 1 10 100 1000 v ce = -1v h fe , dc current gain i c [ma], collector current -0.1 -1 -10 -100 -1000 -10 -100 -1000 -10000 v ce(sat) v be(sat) i c =10i b v be (sat), v ce (sat)[v], saturation voltage i c [ma], collector current -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -0.1 -1 -10 -100 v ce = -1v i c [ma], collector current v be [v], base-emitter voltage -1 -10 -100 -1000 1 10 100 f=1mhz i e =0 c ob [pf], capacitance v cb [v], collector-base voltage -1 -10 -100 -1000 10 100 1000 v ce =-10v f t [mhz], current gain-bandwidth product i c [ma], collector current
ss8550 features ss8550 ? 2007 fairchild semiconductor corporation www.fairchildsemi.com ss8550 rev. 1.0.0 3
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